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Recently, at the first global IC The Entrepreneurs Conference and the 16th China International Semiconductor Expo were held in Shanghai. At the RISC-V Innovative Application Developer Forum, reporters learned that Zhongtian Hongyu Company’s 4F2NOR Flash new generation flash memory has made its debut. This technology, named “Chinese Flash Memory”, has broken through the problems that have plagued the semiconductor NOR flash memory field for many years. The technical bottleneck has filled the international gap and attracted widespread attention.
“After more than ten years of R&D accumulation, we LR Escorts have completed a brave establishment of the original NOR flash memory architecture. “Zhongtian Hongyu Integrated Circuit Unlimited Obligation”Zhao Jingsheng, executive chairman of the company, told reporters.
Zhao Jingsheng, executive chairman of Zhongtian Hongyu Integrated Circuit Co., Ltd., delivered a speech
More than ten years of innovation have subverted traditional technology
Zhongtian Hongyu researchers gave a speech The reporter introduced that flash memory is one of the main media for data storage today. The mainstream flash memory systems include NAND and NOR. However, with the continuous development of semiconductor technology, compared with the rapid evolution of NAND technology, NOR technology seems to have stagnated a few years ago. Due to some design flaws, NOR flash memory cannot continue to follow the advanced technology and has become an obstacle. The key to the large-scale application of NOR flash memory.
Zhongtian Hongyu researcher Liberia Sugar Daddy recalled that in 2010, a researcher accidentally connected the wrong circuit , the R&D team accidentally started the road to innovate NOR. After nearly ten years of research and development, Zhongtian Hongyu has broken through the technical bottlenecks that have plagued the field of semiconductor NOR flash memory technology for many years and finally achieved 4LR Escorts The research and development of F2NOR Flash flash memory technology has become an enterprise that fully owns the core technology and intellectual property rights of 4F2NOR Flash flash memory.
“Through our architectural design, NOR flash memory can completely enter the process of 65nm or even below 28nm.” Zhongtian Hongyu researchers told reporters that compared with NAND flash memory, which is more suitable for large-capacity applications, NOR flash memory The read speed of NOR flash memory is much faster, which is very suitable for on-chip storage applications. However, due to process limitations, the application market of NOR flash memory is much smaller than that of hundreds of billions of NAND flash memories. Many chips still use DRAM+ NAND methodLR Escortsreplacement. Zhongtian Hongyu’s technological breakthrough will make NOR flash memory more competitive. By replacing DRAM+NAND, it can bring Liberia Sugar to the chip DaddyHigher read speed and lower memory read power consumption, and the latter has now become a very critical part of the overall power consumption of the chipLiberians Escortring.
Regarding this innovation, Dr. Stefan Lai, the inventor of NOR Flash and former vice president of Intel, believes that this is a blessing to him The revolutionary innovation of NOR Flash
Liberia Sugar Zhao Jingsheng is the executive chairman of Zhongtian Hongyu. Issued a letter of appointment as chief technical consultant to Dr. Stefan Lai
In the 1980s, Dr. Stefan Lai discovered NLiberians SugardaddyOR was subsequently industrialized, but because NOR could not continue to grow at that time, its development came to a standstill. “I never thought that something new would emerge. This was a response to NOR FlaLiberia Sugar Daddysh’s revolutionary invention Liberia Sugar solved many problems . The meaning is very serious. “Dr. Stefan Lai told reporters, “The emergence of the new generation of NOR technology gives me new hope. ”
China Intelligent Manufacturing has enhanced my country’s chip independence level
Currently, this company headquartered in Shanghai and focusing on the field of integrated circuit memory chips has 43 international patents and more than 20 patents are being applied for.
What product innovations will this breakthrough technological innovation bring? Zhao Jingsheng told reporters that currently, Zhongtian Hongyu has completed 1MB LR EscortsNOR’s silicon verification and successful tape-out began to be used in the design of Zhongtian Hongyu’s first MCU (micro control unit) product in 2017 This allows the chip to operate at a voltage as low as 1V. Its high voltage and low power consumption characteristics make this MUC very promising in application fields such as the Internet of Things.
“Chinese Flash Memory” relies on its powerful performance. and price advantages, it has broad market prospects. It can not only upgrade existing products using traditional NOR flash memory, but also enter consumer smart electronic products such as mid-to-low-end performance mobile phones, smart TVs, set-top boxes, and domestic tablets. car market. With further R&D and process optimization, the new generation of NOR flash memory will touch the massive storage chip market of NAND flash memory and expand to the artificial intelligence market.Smart CategoryLiberia Sugar Daddy.
“We hope to work with partners from both high and low levels to carry out manufacturing and process research, take a bigger step in China’s flash memory, and enhance the level of my country’s chip independence.” Zhao Jingsheng told reporters.
Talking about the future, Zhao Jingsheng said that among Zhongtian Hongyu’s three major goals, the first is to allow China to independently develop memory chips Liberians Sugardaddy started from scratch. The second is to let the memory chip have full intellectual property rights. The third is to take a further step to complete the march of NOR flash memory to 1X, develop into 3D NOR, and achieve joint cooperation with manufacturers in the upper and lower reaches of the industry chain. Win-win.
Original title: People’s Daily Online: Breaking through the technical bottleneck in the field of semiconductor NOR flash memory Liberians Escort “China Flash Memory “First show
Article source: [Microelectronics signal: icunion, WeChat public account: Semiconductor Industry Alliance] Welcome to add tracking attention! Please indicate the source when transcribing and publishing the article.
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